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    Quick Facts

    Medium Of InstructionsMode Of LearningMode Of Delivery
    EnglishSelf StudyVideo and Text Based

    Important dates

    Certificate Exam Date

    Start Date : 24 Apr, 2026

    Courses and Certificate Fees

    Fees InformationsCertificate AvailabilityCertificate Providing Authority
    INR 1000yesIIT Roorkee

    The Syllabus

    • Introduction to Wireless Systems: Classification of wireless systems; Design and performance issues: Choice of operating frequency, multiple access and duplexing, circuit switching versus packet switching, propagation, radiated power and safety; Cellular telephone systems and standards.

    • Noise in RF integrated Systems: Basic threshold detection, noise temperature and noise figure, noise figure of a lossy transmission line; Noise figure of cascade systems: Noise figure of passive networks, two-port networks, Noise in Active components: CMOS/ BiCMOS,

    • Distortion in Receiver Design: Linearity, Intermodulation, Dynamic Range, Sensitivity of the receiver, Spurious Free Dynamic Range (SFDR).

    • Receiver Architecture such as heterodyne, homodyne, Hartley, Weaver, advanced receiver architecture etc.,

    • Active Device: Comparison of active devices such as BJT, MOSFET, MESFET, HEMT, and HBT; Circuit models for FETs and BJTs; Basic parameters of active devices such as ft/fmax, transconductance, capacitance, resistance, etc.

    • Passive Components and Impedance Matching: On-chip Inductor, capacitor, resistor, resonant circuit and its application in RF IC. Various impedance matching techniques.

    • Amplifier Design: Transistor Theory, Transistor S-parameters, gain & Stability, Unilateral and bilateral design, low noise amplifier (LNA Design)

    • Various LNA topologies: CS/CE stage with inductive load, CS/CE stage with resistive feedbac, CG/CB topologies, noise cancellation techniques, differential LNA, Broad band amplifier design, Biasing in RF & microwave circuits

    • Mixers: Mixer characteristics: Image frequency, conversion loss, noise figure; Devices for mixers: p-n junctions, Schottky barrier diode, FETs; Diode mixers: Small-signal characteristics of diode, single-ended mixer, large-signal model, switching model; FET/MOSFET Mixers: Single-ended mixer, other FET mixers; Balanced mixers; Image reject mixers.(cont)

    • Mixers: Mixer characteristics: Image frequency, conversion loss, noise figure; Devices for mixers: p-n junctions, Schottky barrier diode, FETs; Diode mixers: Small-signal characteristics of diode, single-ended mixer, large-signal model, switching model; FET/MOSFET Mixers: Single-ended mixer, other FET mixers; Balanced mixers; Image reject mixers.

    • Oscillators and Frequency Synthesizers: General analysis of RF oscillators, transistor oscillators, voltage-controlled oscillators, dielectric resonator oscillators, frequency synthesis methods, analysis of first and second order phase-locked loop, oscillator noise and its effect on receiver performance.(cont)

    • Oscillators and Frequency Synthesizers: General analysis of RF oscillators, transistor oscillators, voltage-controlled oscillators, dielectric resonator oscillators, frequency synthesis methods, analysis of first and second order phase-locked loop, oscillator noise and its effect on receiver performance.  

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