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    Quick Facts

    Medium Of InstructionsMode Of LearningMode Of Delivery
    EnglishSelf Study

    Courses and Certificate Fees

    Fees InformationsCertificate AvailabilityCertificate Providing Authority
    INR 1000yesIIT Kanpur

    The Syllabus

    • General Overview - history, integration and scaling trends in VLSI.

    • Enablers of VLSI technology – planar technology, basic characterisation, cleanroom; IC Device Process Integration – doping, patterning process; Planar processing of P-N junction diode.

    • IC Device Process Integration – CMOS planar processing; Evolution of FET structure and newer device structures.

    • IC packaging; Support technology - Vacuum systems.

    • Support technology - Plasma for processing; Crystalline substrates.

    • Substrates – silicon wafers; silicon-on-insulator (SOI); GaAs and alternate substrates.

    • Unit Additive Processes – Oxidation and nitridation of silicon.

    • Unit Additive Processes – Diffusion.

    • Unit Additive Processes – Ion implantation.

    • Unit Additive Processes – Thin film process; Introduction to chemical vapour deposition (CVD).

    • Unit Additive Processes – More on CVD process; physical vapour deposition (PVD).

    • Unit Patterning Process - photolithography; Unit Subtractive Processes – Etching (cleaning, wet and dry); Statistical Tools  - statistical process control (SPC) and design of experiment (DOE); Conclusion Lecture.  Supplementary lecture on printing process for thin films.

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